Besse, Rafael 
; Wang, Han; West, Damien; Silva, Juarez Lopes Ferreira da ; Zhang, Shengbai
Source: The Journal of Physical Chemistry Letters. Unidade: IQSC
Subjects: CONDUTIVIDADE ELÉTRICA, ENERGIA ELÉTRICA
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ABNT
BESSE, Rafael et al. Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction. The Journal of Physical Chemistry Letters, v. 13, p. 6407−6411, 2022Tradução . . Disponível em: https://doi.org/10.1021/acs.jpclett.2c01526. Acesso em: 03 maio 2024.APA
Besse, R., Wang, H., West, D., Silva, J. L. F. da, & Zhang, S. (2022). Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction. The Journal of Physical Chemistry Letters, 13, 6407−6411. doi:10.1021/acs.jpclett.2c01526NLM
Besse R, Wang H, West D, Silva JLF da, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction [Internet]. The Journal of Physical Chemistry Letters. 2022 ;13 6407−6411.[citado 2024 maio 03 ] Available from: https://doi.org/10.1021/acs.jpclett.2c01526Vancouver
Besse R, Wang H, West D, Silva JLF da, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type‑I MoS2/PtSe2 van der Waals Junction [Internet]. The Journal of Physical Chemistry Letters. 2022 ;13 6407−6411.[citado 2024 maio 03 ] Available from: https://doi.org/10.1021/acs.jpclett.2c01526
